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Through Silicon Via (TSV) has emerged as a good solution to provide high density interconnections in three-dimensional packaging interconnect technologies. However, the thermal-mechanical reliability is a big issue. When the TSV is subjected to thermal load, large stress and strain would be created at the interface of the materials because of the great mismatch of CTE. In this paper, an axi-symmetric...
Through silicon vias (TSVs) have been extensively studied because it is a key enabling technology for achieving three dimensional (3D) chip stacking and silicon interposer interconnection. The large mismatch between the coefficients of thermal expansion (CTE) of copper and silicon induces stress which is critical for the TSV reliability performance. This paper proposes analytical solutions of stress...
The silicon layer containing through silicon vias (TSVs) is considered as anisotropic fiber reinforced composite layer with different longitudinal and transversal properties. An analytical approach is presented to estimate the effective Young's modulus, Poisson's ratio and coefficient of thermal expansion (CTE) for composite layer. It shows that the TSVs have no significant influence on the deflection...
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