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We demonstrate an amorphous silicon carbide (a-SiC) microresonator with optical Q up to 1.3 × 105. This enables us to characterize the third-order nonlinearity of a-SiC with n2 = (5.9 ± 0.7) × 10−15 cm2/W in the telecom band.
We demonstrate selective mode splitting (SMS) in microresonators. SMS can split one selected optical mode up to 1.25 nm with other modes unperturbed. This opens a new gate for phasematching in parametric oscillations in microresonators.
We report position-squared coupling six orders of magnitude larger than previously demonstrated, allowing measurement of as few as 652 phonons and presenting a practical route toward probing of single-phonon jumps and characterization of phonon statistics.
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