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We present results of our studies dealing with the early stages of growth of Ga–N and Al–N monolayers on the 4H-SiC {0001} substrates. These studies are based on first principles calculation in the framework of density functional theory. Some stable adsorption sites are found for Ga, N, and Al atoms on the 4H-SiC {0001} surfaces. These are in particular T4 for Ga and N atoms adsorbed on the (0001)...
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