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The properties of deep levels created by proton irradiation in Be-doped Al0.5Ga0.5As MBE layers have been investigated using deep level transient spectroscopy (DLTS). The samples were irradiated by H+ ions of an energy equal to 200keV and a fluence of 3×1011cm−2. DLTS revealed five hole traps in the irradiated samples. Proton irradiation increased the concentration of one of the hole traps present...
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