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We investigated the electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with top-emission and flip-chip structures. Compared with top-emission LEDs, flip-chip LEDs exhibited a 0.25V smaller forward voltage and an 8.7Ω lower diode resistance. The light output power of the flip-chip LED was also larger than that of the top-emission LED by factors of 1.72 and 2...
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