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High-speed switching capabilities of SiC MOSFET power modules allow building high power converters working with elevated switching frequencies offering high efficiencies and high power densities. As the switching processes get increasingly rapid, the parasitic capacitances and inductances appearing in SiC MOSFET power modules affect switching transients more and more significantly. Even relatively...
This paper presents a study of the GaN HEMT switching features conducted with the use of the half-bridge test converter rated at 2,5 kW. Results of simulation performed in LTSpice are verified by a series of experimental tests at the variable input voltage (up to 400 V) and switching frequency (up to 250 kHz). Three switch scenarios were analyzed: HEMT without the anti-parallel diode, HEMT with an...
An Experimental performance analysis of a parallel connection of two 1200/80 MΩ silicon carbide SiC MOSFETs is presented. Static parallel connection was found to be unproblematic. The switching performance of several pairs of parallel-connected MOSFETs is shown employing a common simple totem-pole driver. Good transient current sharing and high-speed switching waveforms with small oscillations are...
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