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Parallel connection of silicon carbide power modules is a possible solution in order to reach higher current ratings. Nevertheless, it must be done appropriately to ensure a feasible operation of the parallel-connected power modules. High switching speeds are desired in order to achieve high efficiencies in medium and high-power applications but parasitic elements may give rise to a non-uniform current...
Silicon Carbide high-power modules populated with several parallel-connected junction field-effect transistors must be driven properly. Parasitic elements could act as drawbacks in order to achieve fast and oscillation-free switching performance, which are the main goals. These two requirements are related closely to the design of the gate-drive unit, and they must be kept under certain limits when...
Driving a high-power module which is populated with several parallel-connected silicon carbide junction field-effect transistor chips must be done appropriately. Parasitic elements may give rise to oscillations during turn-on and turn-off. Fast and oscillation-free switching performance is desired in order to achieve a high efficiency. The key-issue in order to fulfill these two requirements is the...
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