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This paper presents a study of the GaN HEMT switching features conducted with the use of the half-bridge test converter rated at 2,5 kW. Results of simulation performed in LTSpice are verified by a series of experimental tests at the variable input voltage (up to 400 V) and switching frequency (up to 250 kHz). Three switch scenarios were analyzed: HEMT without the anti-parallel diode, HEMT with an...
This paper discusses power losses in a current-fed DC/DC converter aimed for photovoltaic applications. Scenarios of the low voltage switch realization analyzed include a transistor with a series diode and two transistors in series. Both the high and the low voltage stage are designed with Si MOSFETs and GaN HEMTs to verify advantages of the new material in these applications. Semiconductor devices...
The paper presents a study of the power losses in 1700V rated half-bridge power modules applied in a 250kVA three-phase converter. Two types of the modules with comparable parameters (1700V/300A) are analyzed: the first one is based on Si IGBT and the second is built with SiC MOSFETs and Schottky diodes. A special focus of this paper is a reverse conduction of SiC MOSFETs. This phenomenon is analyzed...
The paper presents a concept of the three-phase DC/AC inverter with two impedance networks connected in series (2×Z) built with only Silicon Carbide power devices. Authors describe features of the novel inverter with special attention on serious reduction of voltages on applied Z-network capacitors. Benefits from application of SiC devices: JFETs and Schottky diodes are also discussed. Design and...
This paper describes design, construction and tests of 2kVA three-phase Current Source Inverter with Silicon Carbide (SiC) JFETs and Schottky diodes. Low on-resistance and switching energies of SiC JFET lead to switching frequency increase to 100kHz. In result size and weight of inverter is reduced. Operation of 2kVA model is illustrated by laboratory results - measured efficiency at nominal conditions...
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