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SiC power devices offer a good chance to improve performance of impedance source converters; however, new challenges must be met. This paper presents a study on phenomena occurring due to parasitic capacitances of inductors in a high-frequency quasi-Z-source inverter. Rapid changes of voltage values caused by new, fast-switching SiC MOSFETs and Schottky diodes make this issue important. Negative influence...
The paper presents SiC-based three-level T-type modules designed for a high-performance 30kVA DC/AC inverter operating at high frequency 85 kHz with low THD of the output voltage. This inverter system consists of two integrated parts. The first part is active and contains three parallel-connected three-phase T-type modules built with fast-switching SiC power transistors. The second, passive part of...
This paper presents an experimental study of the half-bridge based on high voltage enhancement mode GaN high electron mobility transistors (HEMTs). It was tested with pure inductive load at various switching frequencies and power levels to verify gate driver and cooling system. All tests performed confirm excellent performance of the 650 V GaN HEMTs and the developed half-bridge stage may be applied...
This paper discusses design issues of the high-frequency, four-leg interleaved DC/DC boost converter (6kW/650V ) that combines high efficiency with high power density. Low switching energies of the applied SiC MOSFETs and Schottky diodes offer operation at high switching frequency. Together with suitable phase-shift of the control signals this leads to input/output current frequency multiplication...
The paper presents an inductor with reduced self-capacitance, designed and evaluated with fast-switching SiC transistors in dc–dc converters. A conventional inductor with the same core and number of turns was also build for comparison. The two inductors are tested experimentally on two different 2 kW, 100 kHz dc–dc converters with silicon carbide switches—one with a junction field-effect transistor...
The paper proposes a novel topology of a simple base drive unit for silicon carbide bipolar junction transistors (BJTs) based on the current-source principle. Energy stored in a small, air-cored inductor is employed to generate a current peak forcing the BJT to turn-on (10–20ns) very rapidly. The driver enables very high switching performance and very low switching losses of the driven BJT. Both the...
The paper presents a concept of the three-phase DC/AC inverter with two impedance networks connected in series (2×Z) built with only Silicon Carbide power devices. Authors describe features of the novel inverter with special attention on serious reduction of voltages on applied Z-network capacitors. Benefits from application of SiC devices: JFETs and Schottky diodes are also discussed. Design and...
An experimental performance comparison between SiC JFET and SiC BJT switches which are used as the main switch for a 2 kW dc/dc converter is presented. In order to perform a fair comparison and due to the different chip areas of these two SiC devices, they both operate under the same on-state losses. Moreover, the switching speeds of the gate and base drivers are approximately equal. It is experimentally...
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