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This paper presents an experimental study on series-connection of Silicon Carbide MOSFETs. The switching performance of two series-connected SiC MOSFETs rated at 1200 V and having on-state resistances of 80 mΩ was tested using a double-pulse test circuit at blocking voltages up to 1 kV DC and currents up to 50 A. The design and experimental validation of a suitable double-pulse test setup and gate...
The paper presents four asymmetrical pulse width modulation techniques for three-phase impedance source converters operating at high switching frequencies. The concept behind all proposed methods is to introduce single-phase shoot-trough states and reduce commutation currents of fast-switching SiC MOSFETs. All techniques are explained and verified by means of Saber simulations and laboratory experiments...
SiC power devices offer a good chance to improve performance of impedance source converters; however, new challenges must be met. This paper presents a study on phenomena occurring due to parasitic capacitances of inductors in a high-frequency quasi-Z-source inverter. Rapid changes of voltage values caused by new, fast-switching SiC MOSFETs and Schottky diodes make this issue important. Negative influence...
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