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High germanium content silicon germanium (SiGe) structures are of special importance for future silicon based microelectronics. The lattice mismatch of more than 1% causes large elastic strain, the energy of which increases with the square of the strain. This high strain energy does not allow a straight continuation of the growth and science of pseudomorphic SiGe as in the existing very successful...
The growth and doping of Si and SiGe layers on Si substrates were investigated by molecular beam epitaxy (Si-MBE). Growth took place at temperatures below the standard Si-MBE process regime (<550 degrees C). The lowest epitaxial temperature achieved was 140 degrees C. Results on matrix growth, metastability of strained-layer SiGe, and doping are given, and the structure and characteristics of two...
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