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High sensitivity deep ultraviolet (DUV) photodetectors operating at wavelengths shorter than 280 nm are useful for various applications, including chemical and biological identification, optical wireless communications, and UV sensing systems (1). While semiconductor avalanche photodiodes (APDs) can be more compact, lower cost and more rugged than the commonly used photomultiplier tubes (PMTs), commercially...
Deep ultraviolet (DUV) avalanche photodiodes (APD) sensitive at wavelengths shorter than 260 nm have numerous applications, including chemical and biological identification and water quality monitoring. Wide bandgap materials such as silicon carbide (SiC) and the III-nitrides (AlInGaN) are well suited for UV detector applications. SiC devices have high avalanche gain, low dark current and low excess...
AlGaN/SiC separate absorption and multiplication avalanche photodiodes (SAM-APD) offer a unique approach for fabricating high gain photodetectors with tunable absorption in the deep ultraviolet regime. However, unlike conventional heterojunction SAM APDs, the formation of charge at the hetero-interface arising from spontaneous and piezoelectric polarization can dramatically affect device performance...
We report here enhanced solar energy harvesting using a hybrid solar cell with silicon solar cells (visible-infrared light) on bottom and an InGaN solar cell (UV light) on top. The InGaN solar cell with 30 QW periods has peak external quantum efficiency (EQE) of 40 % at 380 nm, an open circuit voltage (Voc) of 2.0 V, a short circuit current (Isc) of 0.8 mA/cm2, and fill factor of 55%. We have demonstrated...
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