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Semiconductor innovation through a new paradigm of 3D×3D System Scaling can carry the industry into the next decade. Besides the internet of things (IoT), cloud computing, and big data analytics, we can imagine a bionic age emerging with digitally-enhanced or semiconductor-augmented vision, hearing, limbs, and many other capabilities, such as cognitive computing, universal translators, and brain wave...
This paper describes a single stage distributed amplifier with 10 dB gain in the 0.15 - 4.98 GHz frequency range. The amplifier uses four packaged GaAs MESFETS and was constructed on a microstrip, 4X2 inch circuit.
A class B and a class F power amplifier are described using a GaN HEMT device. They both were designed to operate at a frequency of 1.7 GHz with the same bias conditions. The performances of each amplifier were successfully simulated and compared. A class B amplifier was physically implemented and achieved a high power-added-efficiency of 69.2%, 39.9 dBm output power and associated gain of 14.9 dB...
A novel bipolar isolation structure with capability of significantly reducing collector-base capacitance and base resistance is presented. A silicon-on-insulator (SOI) region surrounding the collector opening is used to minimize the collector window width, and to increase the thickness of the extrinsic base contact layer for a given device topography. This partial-SOI isolation structure can be combined...
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