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We report on heavy-ion-induced modifications of 65–75nm thick Ni/Si bilayers in the regime of electronic stopping (350MeV 197 Au 26+ -ions) and nuclear stopping (400keV Xe + -ions). The samples were analyzed by means of Rutherford back-scattering spectroscopy, X-ray diffraction and magneto-optical Kerr effect. For both types of ions, interface mixing was observed, correlated...
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