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In this paper, an overview of main results concerning THz detection by nanometer field effect transistors (FETs) and heterojunction based transistors (HBTs) is presented. Different GaInAs/InP and GaN/AlGaN nanometer field effect transistors based detectors are presented. We present also first Silicon C-MOS transistors based integrated circuits for wireless communication in sub-THz range. Special attention...
We present our results concerning THz detection and imaging by silicon FETs. We show that FETs are sensitive and fast enough to be used to construct focal plane arrays of future THz cameras.
Recent results on THz detection by FETs are reported. THz Imaging with FET and detection in quantizing magnetic field. Results of THz Imaging show that FETs arrays are good candidate for real time imaging. In magnetic field we report an enhancement of signal at the cyclotron resonance condition.
We demonstrate that a proper antenna and transistor design can provide high responsivity for Terahertz radiation and imaging capability even above the 1 THz limit with a low-cost 130 nm CMOS technology. This result opens the way to CMOS THz imagers working at high frequencies and therefore exhibiting high a spatial resolution - down to ~300 μm.
We present recent results on detection of terahertz radiation with nanometer size GaAs FETs and Si MOSFETs at room temperature. We demonstrate that the detection sensitivity and speed allows application of the transistors in terahertz imaging systems. At low temperatures the transistors can act as magnetic field tunable detectors.
Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.
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