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GaAs field effect-transistors are used for single-pixel imaging using frequencies above 1 THz at 300 K. Images obtained in transmission mode at 1.63 THz are recorded with spatial resolution of 300 μm. We demonstrate that, with applied drain to source current, the imaging at up to 2.5 THz is possible.
A 140-GHz fundamental mode VCO in 90-nm CMOS and a 410-GHz push-push VCO in 45-nm CMOS, and a 125-GHz Schottky diode frequency doubler, a 50-GHz phase locked loop with a frequency doubled output at 100 GHz, a 180-GHz Schottky diode detector and a 700-GHz plasma wave detector in 130-nm CMOS have been demonstrated. Based on these, paths to terahertz CMOS circuits are suggested.
The possibility of using commercial classical near-infrared (~30 THz) focal-plane micro-bolometer arrays in the sub-terahertz frequency range is studied. Real-time room-temperature pixilated detector imaging of a 0.5 THz (lambda = 600 mum) spatial beam profile emitted from a backward-wave oscillator is presented. Images, with a signal-to-noise ratio of 5 are demonstrated, leading to an estimate of...
An overview is given on recent experimental results in THz detection with high electron mobility transistors. Polarization studies showed clear antenna (directional) effects in detection. Experiments in quantizing magnetic fields allowed us to clarify the role of gated and ungated parts of the channel in detection.
The channel of high electron mobility transistor can act as a resonator for the plasma waves propagating in 2D electron gas. The plasma frequency increases with reduction of the channel length and can reach the Terahertz range for nanometre size transistors. This work presents an overview of the experimental results on THz detection and emission by nanometre size transistors and multi-grating structures...
The channel of nanometre field effect transistor can act as a resonant cavity for plasma waves. The frequency of these plasma waves is in the Terahertz range and can be tuned by the gate bias. During the last few years Terahertz detection and emission related to plasma wave instabilities in nanometre size field effect transistors was demonstrated experimentally. In this work we review the recent experimental...
In this work we present an overview of experimental results on THz detection and emission by nanotransistors. We present recent results on THz emission obtained in different types of InGaAs/InP and GaN/AlGaN nanometric high electron mobility transistors.
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