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GaAs field effect-transistors are used for single-pixel imaging using frequencies above 1 THz at 300 K. Images obtained in transmission mode at 1.63 THz are recorded with spatial resolution of 300 μm. We demonstrate that, with applied drain to source current, the imaging at up to 2.5 THz is possible.
We report on the observation of photocurrents in GaAs High Electron Mobility and Si Field Effect Transistors. We show that illuminating the samples with high power terahertz laser radiation causes electric currents. These currents are driven by plasmonic effects in two dimensional electron gases.
We demonstrated a room-temperature detection of terahertz radiation with a plasma wave nanometric transistor. The detection is resonant and can be efficient for terahertz time-resolved imaging.
Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.
We observed intensive room temperature broadband terahertz emission from two-dimensional plasmons in dual grating-gate high electron-mobility transistors. Experiments were performed using infrared spectroscopy with a silicon bolometer. Simulation reveals the thermal excitation of the plasmons.
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