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We report on Terahertz wireless communications and fast imaging experiments at 300 GHz, using nanometer-sized transistors as detectors. The physical mechanism of the detection is related to the overdamped plasma waves in the transistor channel.
Development of new terahertz (THz) direct sensors based on the oscillation of the plasma waves in the channel of sub-micron FETs is increasing in interest due to its great potential in imaging and spectroscopy. FETs based in the heterosystem Si/SiGe is wafer-compatible with mainstream CMOS closely follow both noise and gain performances of III-V families in microwave applications; the high-values...
We present our results concerning THz detection and imaging by silicon FETs. We show that FETs are sensitive and fast enough to be used to construct focal plane arrays of future THz cameras.
Recent results on THz detection by FETs are reported. THz Imaging with FET and detection in quantizing magnetic field. Results of THz Imaging show that FETs arrays are good candidate for real time imaging. In magnetic field we report an enhancement of signal at the cyclotron resonance condition.
GaAs field effect-transistors are used for single-pixel imaging using frequencies above 1 THz at 300 K. Images obtained in transmission mode at 1.63 THz are recorded with spatial resolution of 300 μm. We demonstrate that, with applied drain to source current, the imaging at up to 2.5 THz is possible.
We demonstrate that a proper antenna and transistor design can provide high responsivity for Terahertz radiation and imaging capability even above the 1 THz limit with a low-cost 130 nm CMOS technology. This result opens the way to CMOS THz imagers working at high frequencies and therefore exhibiting high a spatial resolution - down to ~300 μm.
We report on the observation of photocurrents in GaAs High Electron Mobility and Si Field Effect Transistors. We show that illuminating the samples with high power terahertz laser radiation causes electric currents. These currents are driven by plasmonic effects in two dimensional electron gases.
We present recent results on detection of terahertz radiation with nanometer size GaAs FETs and Si MOSFETs at room temperature. We demonstrate that the detection sensitivity and speed allows application of the transistors in terahertz imaging systems. At low temperatures the transistors can act as magnetic field tunable detectors.
We calculate the terahertz absorption spectrum of the high-electron-mobility transistor with a short gate and long ungated channel regions and show that the main contribution to the linewidth of the gated plasmon resonance can be attributed to the plasmon-plasmon inter-mode scattering. The results allow to interpret recent experimental results of resonant THz detection by InGaAs nanotransistors. The...
Detection of 100 GHz electromagnetic radiation by a GaAs/AlGaAs high electron mobility field-effect transistor was investigated at 300 K. The radiation was linearly polarized and measurements were carried out as a function of the angle r between the direction of polarization and the symmetry axis of the transistor. Source-drain photovoltage measured showed the angular dependence A0 cos2(alpha - alpha...
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