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Experimental and theoretical investigations of the influence of substrate thickness on the performance of Si field effect transistor terahertz detectors are presented‥ We show that in the case of planar metal antennas a significant portion of incoming radiation, instead of being coupled to the transistors, may be coupled to the substrate leading to important responsivity losses‥ The ways of avoiding...
We demonstrate that a proper antenna and transistor design can provide high responsivity for Terahertz radiation and imaging capability even above the 1 THz limit with a low-cost 130 nm CMOS technology. This result opens the way to CMOS THz imagers working at high frequencies and therefore exhibiting high a spatial resolution - down to ~300 μm.
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