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GaAs/AlGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the Shubnikov-de Haas oscillations of the detection signal. Measurements carried out with a simultaneous modulation of the intensity of the incident THz beam and the transistor gate voltage showed that the detection...
We present the possibility of using magnetic field to enhance responsivity and to tune spectral range of far-infrared InSb detector (based on photoconductivity effect) beyond its standard range limited to about 30 cm^{-1}. We show that due to cyclotron resonance assisted transitions we can use it as a tunable detector working up to energies about 180 cm^{-1} (22 meV). We have used such a detector...
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