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Cross‐sectional scanning capacitance microscopy measurements of unintentionally doped model structures for InGaN quantum wells, GaN barriers and AlInN electron‐blocking layers showed n ‐type conductivity for the In‐containing layers. Secondary ion mass spectrometry indicated that oxygen impurities are the likely source of the electron density in the model layers. The n ‐type conductivity as well as...
The structural and optical properties of trench defects, which are poorly understood yet commonly occurring defects observed on the surfaces of InGaN multiple quantum wells (MQW), are reported. These defects comprise near‐circular trenches which enclose areas of MQW which give rise to a red shift in peak photoluminescence emission and a change in cathodoluminescence intensity with respect to the surrounding...
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