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In this paper, microwave power performance at 10 GHz of HEMTs fabricated on MOCVD and MBE epitaxial structures grown on composite substrates is demonstrated. These substrates, based on monocrystalline-SiC layer on a polycrystalline-SiC (SiCopSiC), are engineered using the Smart Cuttrade technology. They are based on innovative engineering in which a thin SiC single crystal layer is transferred on...
In this letter, successful operation at 10 GHz of T-gate HEMTs on epitaxial structures grown by metal-organic chemical vapor deposition (MOCVD) or MBE on composite substrates is demonstrated. The used device fabrication process is very similar to the process used on monocrystalline SiC substrate. High power density was measured on both epimaterials at 10 GHz. The best value is an output power density...
The first results obtained from AlGaN/GaN HEMT devices on MBE epitaxial structures grown on 'composite' substrates are presented. These substrates are based on innovative structures in which a thin Si single crystal layer is transferred on top of a thick polycrystalline SiC wafer. The fabrication of the transistors is based on a process flow close to those used on epitaxy on Si bulk substrates. The...
In this paper, arc presented the first results obtained from AlGaN/GaN HEMTs devices processed on both MBE and MOCVD epitaxial structures grown on "composite" substrates. These substrates are based on innovative structures in which a thin Si or SiC single crystal layer is transferred on top of a thick polycrystalline SiC wafer with a thin SiO2 intermediary insulating layer. The fabrication...
SiCOI (SiC on insulator) composite substrates obtained by the Smart-Cuttrade process are alternative possible substrates for epitaxial growth of wide band gap (WBG) materials such as GaN and GaN alloys. Similar to bonded SOI structure, the SiCOI structures basically comprises a thin film of single SiC crystal bonded onto a substrate such as, for instance, silicon substrate. Additionally to the well...
A InP/GaAsSb/InP double-heterojunction bipolar transistor (DHBT) structure has been defined, realized by MBE epitaxy, and optimized, thanks to simulation based on in-depth physical characterizations. A circuit-oriented technology has been developed, which has been validated by the design and fabrication of a full-rate (40 GHz clock) 40 Gbit/s D-FF.
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