The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, arc presented the first results obtained from AlGaN/GaN HEMTs devices processed on both MBE and MOCVD epitaxial structures grown on "composite" substrates. These substrates are based on innovative structures in which a thin Si or SiC single crystal layer is transferred on top of a thick polycrystalline SiC wafer with a thin SiO2 intermediary insulating layer. The fabrication...
SiCOI (SiC on insulator) composite substrates obtained by the Smart-Cuttrade process are alternative possible substrates for epitaxial growth of wide band gap (WBG) materials such as GaN and GaN alloys. Similar to bonded SOI structure, the SiCOI structures basically comprises a thin film of single SiC crystal bonded onto a substrate such as, for instance, silicon substrate. Additionally to the well...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.