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Reported is the development of λ ~ 4 μm highly strain-compensated In0.7Ga0.3As/In0.34Al0.66As/InP quantum cascade lasers grown by metal organic vapour phase epitaxy. 10 μm-wide and 3 mm-long devices with as-cleaved facets deliver more than 2.4 W of peak optical power from both facets at 300 K with threshold current density of 2.5 kA/cm2. The lasers operate up to at least 400 K with characteristic...
Ridge waveguide type-I quantum-well GaSb-based diode lasers, with active regions utilizing InGaAsSb/AlInGaAsSb quantum wells, have been demonstrated to operate at temperatures as high as 40°C with 1 mW of power at wavelengths above 3.2 μm.
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