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Nowe rozwiązanie unipolarnego przyrządu mocy zostało nazwane SVMOS. Powstało ono na podstawie modyfikacji struktury VDMOS co zostało przedstawione. Źródłem takiej modyfikacji jest koncepcja struktury SMIS, która również była rozważana. Poprawność zaproponowanej modyfikacji została zweryfikowana na drodze symulacji numerycznych zarówno modyfikowanej struktury VDMOS jak i zaprojektowanej SVMOS.
The new solution of unipolar device, called SMIS, that can offer some advantages in the field of power semiconductor devices is presented. Correctness of the SMIS concept with reference to its application to power unipolar transistors has been checked by numerical simulations and manufacturing of test structures. The results of these investigations are presented in this paper.
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