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N and p channel FinFETs with fin widths in the range of 15-30 nm and gate lengths down to 20 nm have been processed using e-beam-lithography and nano-etching. The I On -I Off characteristics of n-channel FinFET devices with (100) and (110) sidewall orientation made on the same wafer are compared. Low off currents down to 1 pA/μm and high on-currents were observed and...
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