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In this paper, the characteristics of the kinetic reliability of space four-links mechanism are analyzed and the relationship between the kinetic accuracy and wear clearances in joints is explored, using Advanced First Order and Second Moment (AFOSM) method and Monte-Carlo Simulation (MCS). The Archard wear model is applied to analyze the increasing wear clearances in joints; and the function between...
In this paper, we present the first-ever commercially available embedded Microcontrollers built on 90nm-node with silicon nanocrystal memories that has intrinsic capability of exceeding 500K program/erase cycles. We also show that the cycling performance across temperature (-40C to 125C) is very well behaved even while maintaining high performance that meets or exceeds the requirements of consumer,...
By applying a low temperature sweeping technique, we indentify the energy profile of recoverable hole traps for nitrided oxide and SiO2 pMOSFETs subject to Negative Bias Temperature Stress (NBTS). It is found that the energy distribution of hole traps for nitrided oxide devices has two obvious peaks, one in the lower and one in the upper half of the silicon band gap. Both peaks gradually develop with...
This paper reviews key factors to practical ESD protection design for RF and analog/mixed-signal (AMS) ICs, including general challenges emerging, ESD-RFIC interactions, RF ESD design optimization and prediction, RF ESD design characterization, ESD-RFIC co-design technique, etc. Practical design examples are discussed. It means to provide a systematic and practical design flow for whole-chip ESD protection...
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