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Semiconductor (e.g. silicon, germanium) nanowires have gained interest as an attractive platform to fabricate field effect transistors devices because of their reduced short channel effects by comparison to planar devices. The realization of high performance nanowire devices however has been stymied primarily by large source (5) and drain (D) contact resistances. Here we report the fabrication and...
Self assembled semiconductor (e.g. silicon, germanium) nanowires represent an attractive platform to fabricate field effect transistors devices that can reduce short channel effects in by comparison planar devices. Back-gated field effect transistors with metal contacts represent a common device fabrication method employed to test the electronic properties of semiconductor nanowires. Using a systematic...
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