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InP DHBTs are receiving a great deal of attention for its potential in the yet, undefined, 5G systems. In this paper, "waterfall" curves are evaluated for InP DHBTs at 900MHz and show that it can provide an improvement in PAE at low voltages (10% better than GaAs or SiGe HBTs). RF Knee MAG/MSG metrics at 5.4GHz and 15.4 GHz as compared to GaAs HBTs were also measured. These measurements...
We report progress of the Beijing regional time and frequency network and a series of innovations used for it, including the fiber based multiple-access RF dissemation system, phase-locked free space RF dissemination system.
A single new-type two-strap Ion Cyclotron Resonance Frequency (ICRF) antenna with output RF power of 1.5MW, has been designed and fabricated for the EAST device. it can be operated in the frequency range from 30MHz to 110 MHz. The design of new-type ICRF antenna including the current straps, faraday shield, and support structure and drive system are detailedly presented in this paper. The assembly...
Planar Gunn diodes have been scaled vertically through combining multiple active epilayer stacks present in previously successful GaAs/AlGaAs devices. Comparison of results from fabricated devices with those simulated using a Monte Carlo approach suggest that while current and power output rises in such scaled designs, this is limited by significant heating which results in sub-linear scaling with...
In this paper, we demonstrate the operation of a truly planar Gunn diode working as a self-oscillating mixer at millimeter-wave frequency. The Gunn diode was fabricated in a GaAs/Al0.23Ga0.77As layer structure. An initial proof-of-concept prototype yielded a measured conversion loss of around 20±2.5 dB between 30 GHz and 40 GHz.
In this paper we propose and demonstrate a technique for multi-channel optical mm-wave signal generation by frequency quadrupling. By setting the DC bias of a Mach-Zehnder electro-optic modulator (MZM) to its transmission maximum, second order sidebands are generated while the first order sidebands can be suppressed. In addition to the two peaks of the second order sidebands, the output of the MZM...
The memory characteristics of IrOx metal nanocrystals in an n-Si/SiO2/Al2O3/IrOx/Al2O3/IrOx structure with a small EOT of ˜6 nm have been investigated. The IrOx metal nanocrystals with a small size of ˜3 nm and high-density of ˜0.7??1013/cm2 have been observed. The enhanced memory characteristics with a large memory window of ΔV˜4V at a small gate voltage of ≪5V and good endurance of 104 cycles are...
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