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Due to a reduction of waveguide loss achieved by doping-profile modification, low-power operation, i.e. threshold current of as low as 0.9 mA as well as differential quantum efficiency of around 50% from the front facet, was achieved with 1.55-mum wavelength distributed reflector lasers with wirelike active regions. Injection currents for 1-mW output power of 4.2 and 3.6-mA were obtained for uniform...
Toward injection type GaInAsP/InP membrane lasers consisting of high index contrast waveguide structure, lateral current injection type distributed-feedback lasers on a semi-insulating InP substrate were realized by an electron-beam lithography and organo-metallic vapor-phase-epitaxial regrowth. Single mode operation with a threshold current of 27 mA and a side-mode suppression ratio of 35dB at a...
With aiming at realization of extremely low power consumption active devices for optical interconnections and photonic integrated circuits (PICs), we have been exploring GaInAsP/InP long wavelength lasers consisting of high index-contrast gratings by low-damage fabrication processes. Moreover, active photonic devices based on high index-contrast waveguides, so called dasiaSemiconductor Membrane Lasers,psila...
Injection type DFB lasers directly bonded on an SOI substrate were realized for the first time. A threshold current as low as 104 mA was obtained with a stripe width of 25 mum and a cavity length of 1 mm.
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