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We have investigated at the first time an all-optical switch using self-assembled InAs/GaAs quantum dots (QDs) within a vertical cavity structure. The optical nonlinearity of the QD switch has been optimized by an asymmetric cavity to achieve the maximum differential reflectivity. Optical switching via QD excited states exhibits a fast decay with a time constant down to 23 ps and a wavelength tunability...
AlGaAs/InGaAs/GaAs MODFETs having 20% indium in the channel and Si planar doping (5*10/sup 12/ cm/sup -2/) have been fabricated with gate lengths of 0.1-0.7 mu m and a width of 100 mu m. Gates that are longer than 0.2 mu m are T-shaped and the narrower gates (0.1 and 0.15 mu m) are triangular. From DC measurement a maximum G/sub m/ of 1100 mS/mm has been obtained. The current gain cutoff frequency...
0.2 mu m Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As LMHEMT on InP with an undoped GaInAs layer to reduce gate leakage have been realised and their DC and RF properties have been investigated at cryogenic temperatures. The cutoff maximum frequencies of oscillation F/sub max/ up to 260 GHz are extrapolated at 50K from the maximum unilateral gain (MUG) determined using S-parameters measured...
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