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The preparation of Mg0.2Zn0.8O thin films using sol gel spin coating technique is described. The films will be used as an alternative dielectric material for monolithic microwave integrated circuit (MMIC). In this work, the samples were annealed at various temperatures in order to investigate the effect on the film structure and radio frequency (RF) properties. X-Ray Diffractometer (XRD) was used...
Mg0.2Zn0.8O thin films are proposed as a new dielectric material for monolithic microwave integrated circuit (MMIC) to replace current dielectric materials due to its high permittivity which can lead to size reduction, in addition to being compatible with semiconductor processing. In this work, Mg0.2Zn0.8O films were prepared using sol gel spin coating technique, and the films were deposited on Pt-coated...
This paper describes the material parameters which affect high frequency transmission lines built on ferroelectric lead zirconate titanate (PZT) thin films. The electrical characteristics of two transmission line (TL) structures, namely microstrip (MS) and coplanar waveguide (CPW), were studied over 1 to 20 GHz using electromagnetic simulation and verified through measurement. The characteristics...
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