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A high efficiency, large area deposition process was developed for silicon oxide films using a scale-up of plasma-enhanced chemical vapor deposition (PECVD) with an additional modified electrode design. We constructed an advanced plasma source by modifying an 8in. electrode used in small-scale PECVD into a 370×470mm electrode for large area PECVD. The effect of the modified electrode design on the...
SiO x thin films synthesized on polycarbonate substrates by low temperature plasma processes are electronically meta-stable because the process temperature (<70 °C) needed to prevent deterioration of the polymer substrate is too low to allow the formation of a thermodynamically stable structure with stoichiometric electronic bonding. Therefore, the surfaces are very active and react chemically...
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