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Minority carrier lifetime was determined by MW-PCD method following the industry process well and truly. The wafer as-cut without any treatment showed an effective lifetime about 1.2mus. Then it rose to 2.5~5mus after one side was passivated by silicon nitride. The average lifetime with double layer passivation sharply increased to 48mus average, even over 100mus locally. The escape of hydrogen was...
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