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In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.
To understand the growth mechanism and the effect of catalysts in growing III–V epitaxial nanowires, GaAs (111)B substrates with Au thin films were annealed in a molecular beam epitaxy (MBE) system. Scanning/transmission electron microscopy (SEM/TEM) investigations indicate that, during annealing, the Au catalysts were formed and affect significantly the surface morphology of the GaAs substrates.
To explore the growth mechanism and the effect of non-gold catalysts in growing III–V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.
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