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Nitrogen doping in single walled carbon nanotubes by 300eV N2+ ion implantation has been studied with X-ray photoelectron spectroscopy. We investigated the nitrogen doping concentration in the range of 1.5–11.3at.% and post-irradiation annealing up to 1000°C. We found that nitrogen atoms can be substitutionally inserted into the perfect sp 2 hexagonal network, or bind to two sp 2 carbon...
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