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Anodic-aluminum-oxide (AAO) membranes are fabricated and bonded on the surface of self-assembled InGaAs quantum dots (QDs) samples. The photoluminescence peak wavelengths for the QDs samples are fixed, and the optical intensity is enhanced from the photonic-crystal radiation modes of the AAO periodic nano-hole array.
In0.53Ga0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In0.53Ga0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., Ion/Ioff ∼105, DIBL ∼51 mV/V at Vds = 0.5V for Lg=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high...
Anodic-aluminum-oxide (AAO) membrane was bonded on the surface of self-assembled InGaAs quantum dots (QDs) samples to investigate the photonic crystal effect and optical coupling effect.
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