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In0.53Ga0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In0.53Ga0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., Ion/Ioff ∼105, DIBL ∼51 mV/V at Vds = 0.5V for Lg=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high...
To understand the growth mechanism and the effect of catalysts in growing III–V epitaxial nanowires, GaAs (111)B substrates with Au thin films were annealed in a molecular beam epitaxy (MBE) system. Scanning/transmission electron microscopy (SEM/TEM) investigations indicate that, during annealing, the Au catalysts were formed and affect significantly the surface morphology of the GaAs substrates.
Anodic-aluminum-oxide (AAO) membrane was bonded on the surface of self-assembled InGaAs quantum dots (QDs) samples to investigate the photonic crystal effect and optical coupling effect.
Two-quantum coherences in two-dimensional Fourier-transform (2DFT) spectra are attributed to many-body interactions. 2DFT spectroscopy allows two-quantum coherences in semiconductors to be isolated. As a result, many-body coherences can be separated from biexciton coherences.
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