The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Increase of the saturation power may be approached by means of the parameter adjustment even in a uniform wiggler configuration, which is comparable to the enhancement by using a tapered wiggler. Instead of the beam-wave interaction being lengthened by the use of a wiggler taper, a substantial saturation length may be shortened by virtue of the parameter adjustment.
We have performed high spatial resolution cathodoluminescence images of single InAs/InP quantum dots. Carrier diffusion lengths in the wetting layer below single dots are evaluated as a function of carrier injection, temperature and sample doping.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.