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An In–Ga–Zn oxide (IGZO) layer is applied, for the first time, as the semiconductor layer of a light-addressable potentiometric sensor (LAPS). The IGZO layer sputtered on the commercial ITO/glass substrate could be used as the active layer of an LAPS illuminated by a ultraviolet light-emitting diode (UV LED). In the operation of LAPS, an IGZO/ITO glass substrate with a higher photocurrent and less...
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