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Area‐selective atomic layer deposition (AS‐ALD) is a bottom‐up nanofabrication method delivering single atoms from a molecular precursor. AS‐ALD enables self‐aligned fabrication and outperforms lithography in terms of cost, resistance, and equipment prerequisites, but it requires pre‐patterned substrates and is limited by insufficient selectivity and finite choice of substrates. These challenges are...
All‐inorganic transparent thin‐film transistors deposited solely by the solution processing method of spray pyrolysis are reported. Different precursor materials are employed to create conducting and semiconducting species of ZnO acting as electrodes and active channel material, respectively, as well as zirconium oxide as gate dielectric layer. Additionally, a simple stencil mask system provides sufficient...
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