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Laterally resolved topography and Contact Potential Difference (CPD) images, acquired during the exposure of clean Si(111) 7×7 to molecular oxygen at room temperature, show a heterogeneous oxidation process, without preference for step edges. The increase of and lateral changes in work function variations show that the CPD variations of the final oxide film are related to the silicon/oxide interface...
The development of contact potential difference (CPD) inhomogeneities on oxide-covered silicon samples was investigated by monitoring the CPD of a clean Si(001) 2×1 surface during exposure to molecular oxygen with Kelvin Probe Force Microscopy. A steady fluctuation level is reached within the completion of a monolayer of oxide. Non-continuous oxygen exposure at room temperature and at lower temperatures...
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