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We have confirmed in a combined diffraction and STM study that the usual kinetic growth manipulation (KGM) applied to Si/Si(001) (nucleation at relatively low temperatures and completion of monolayer growth at high temperatures) does not lead to a smooth growth front. We have identified the physical reason for this unexpected behaviour: an anti phase boundary (APB) network develops during growth,...
We have developed a new software for spot profile analysis low energy electron diffraction experiments, which allows variation of the beam energy during a measurement. It enables following multiple diffraction peaks simultaneously. We have explored this possibility in highly accurate measurements of out-of-phase and in-phase intensity during initial growth of Si/Si(111). Under both diffraction conditions...
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