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We have developed laterally asymmetric ${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}/{\rm InP}$ MOSFETs with different regrown contacts at the source $({\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As})$ and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain ${\rm g}_{m}/{\rm g}_{d}$ has been obtained with a reduced output conductance ${\rm g}_{d}$ and improved...
Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/µm) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate...
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