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(K,Li)NbO3 single crystals were successfully grown from a melt with potassium enriched composition under the condition of shallow temperature gradient using the TSSG technique. The growth was along the ??100?? direction in the pseudo-cubic phase. The crystal was allowed to grow laterally from around 10??30h to obtain the cross section desired. The growing crystal was then lifted up above the melt...
In this study, the mechanism for the unique minority-carrier injection-enhanced annealing phenomena and the origin of the major radiation-induced defect in InGaP top cell materials are discussed in comparison with InP. The optimal design for the InGaP base layer thickness of the InGaP/GaAs 2-junction cells for current matching at EOL is examined. It is also found that the radiation tolerance of InGaP/middle...
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