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The correlation of the properties of ZnMgSSe/ZnSe heterostructures to the Mg and S content as well as to the perpendicular strain of the ZnMgSSe layer was studied by high-resolution X-ray diffractometry (HRXRD) and photoluminescence spectroscopy (PL). ZnMgSSe/ZnSe heterostructures were grown on GaAs by MOVPE. The nominal thickness of the quaternary layer was about 250 nm. The S and Mg content ranged...
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