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This paper presents results of statistical analysis of RTN in highly scaled HKMG FETs. A robust algorithm to extract multiple-trap RTN is proposed and applied to show that RTN can cause serious variation even when HKMG and undoped channel are introduced. We further focus on hysteretic behavior caused by RTN with time constants much longer than the circuit timescale. This reveals that RTN also induces...
This work demonstrates, for the first time, the reduction of random telegraph noise (RTN) in high-κ/metal gate (HK/MG) stacks incorporated in 22 nm generation FETs. Many thousands of such FETs have been fabricated, measured, and analyzed using a statistical technique to separate RTN as a major noise component from 1/f noise as a minor component. Based on a statistical comparison of these FETs, we...
We present a new ETSOI CMOS integration scheme. The new process flow incorporates all benefits from our previous unipolar work. Only a single mask level is required to form raised source/drain (RSD) and extensions for both NFET and PFET. Another new feature of this work is the incorporation of two strain techniques to boost performance, (1) Si:C RSD for NFET and SiGe RSD for PFET, and (2) enhanced...
InGaP-GaAs based BIFET is a novel technology that integrates HBT and FET onto a single wafer. The technique expands functionality of circuits and reduces the cost. A novel four-terminal large-signal model was developed for accurate DC and RF applications. The device has a p-layer as backgate that has significant impact on the DC/RF characteristics and therefore, the drain current, gate current, leakage...
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