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We have demonstrated the scalability of a process previously dubbed as Ge “touchdown” on Si to substantially reduce threading dislocations below 10 7 /cm 2 in a Ge film grown on a 2inch-diameter chemically oxidized Si substrate. This study also elucidates the overall mechanism of the touchdown process. The 1.4nm thick chemical oxide is first formed by immersing Si substrates in a solution...
We have measured the time evolution of Ge nucleation density on SiO 2 over a temperature range of 673–973K and deposition rates from 5.1×10 13 atoms/cm 2 s (5ML/min) to 6.9×10 14 atoms/cm 2 s (65ML/min) during molecular beam epitaxy. The governing equations from mean-field theory that describe surface energetics and saturation nucleation density are used to...
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