The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Nucleation and eventual coalescence of Ge islands, grown out of 5 to 7nm diameter openings in chemical SiO 2 template and epitaxially registered to the underlying Si substrate, have been shown to generate a low density of threading dislocations (≪10 6 cm −2 ). This result compares favorably to a threading dislocation density exceeding 10 8 cm −2 in Ge films...
We have demonstrated the scalability of a process previously dubbed as Ge “touchdown” on Si to substantially reduce threading dislocations below 10 7 /cm 2 in a Ge film grown on a 2inch-diameter chemically oxidized Si substrate. This study also elucidates the overall mechanism of the touchdown process. The 1.4nm thick chemical oxide is first formed by immersing Si substrates in a solution...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.