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We study coalescence defects and their possible origins for Ge growth within parallel SiO 2 trenches created on (001) Si along [110] and [100] directions and (001) Ge substrates along [110]. Prior to coalescence, defects are not observed at the top of Ge, emerging from within trenches during lateral growth over the SiO 2 template. However, for Ge on Si growth, coalescence of Ge growing...
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